elektronische bauelemente SMS2020 830ma, 20v n-channel mosfet 21-may-2013 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 w28 ? ? = date code rohs compliant product a suffix of ?-c? specifies halogen & lead-free descriptions the SMS2020 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, load switch and level shift. mechanical data ? trench technology ? supper high density cell design ? excellent on resistance ? extremely low threshold voltage application ? dc-dc converter circuit ? load switch device marking: package information package mpq leader size sot-23 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) rating parameter symbol 10s steady state unit drain ? source voltage v ds 20 v gate ? source voltage v gs 6 v t a = 25c 0.9 0.83 continuous drain current 1 t a = 70c i d 0.72 0.66 a t a = 25c 0.38 0.32 power dissipation 1 t a = 70c p d 0.24 0.2 w t a = 25c 0.79 0.71 continuous drain current 2 t a = 70c i d 0.63 0.57 a t a = 25c 0.29 0.24 power dissipation 2 t a = 70c p d 0.19 0.15 w pulsed drain current 3 i dm 1.4 a maximum junction-to-lead r jl 260 c / w operating junction & stor age temperature range t j , t stg 150, -55~150 c sot-23 millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente SMS2020 830ma, 20v n-channel mosfet 21-may-2013 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. thermal resistance ratings note: 1. surface mounted on fr4 board using 1 square inch pad size, 1oz copper. 2. surface mounted on fr4 board us ing minimum pad size, 1oz copper 3. repetitive rating, pulse width limited by junction temperature, tp=10 s, duty cycle=1% 4. repetitive rating, pulse width limited by junction temperature t j =150c. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 20 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 1 a v ds =16v, v gs =0 gate-source leakage i gss - - 5 a v ds =0 , v gs = 5v gate-threshold voltage v gs(th) 0.45 0.58 0.85 v v ds =v gs, i d =250 a - 220 310 v gs =4.5v, i d =0.55a - 260 360 v gs =2.5v, i d =0.45a drain-source on resistance r ds(on) - 320 460 m ? v gs =1.8v, i d =0.35a forward transconductance g fs - 2 - s v ds =5v, i d = 0.55a body-drain diode ratings diode forward on?voltage v sd 0.5 0.7 1.5 v i s =350ma, v gs =0 dynamic characteristics input capacitance c iss - 50 - output capacitance c oss - 13 - reverse transfer capacitance c rss - 8 - pf v ds =10v, v gs =0, f=100khz total gate charge q g(tot) - 1.15 - threshold gate charge q g(th) - 0.06 - gate-to-source charge q gs - 0.15 - gate-to-drain charge q gd - 0.23 - nc v ds =10v, v gs =4.5v, i d =0.55a turn-on delay time t d(on) - 22 - rise time t r - 80 - turn-off delay time t d(off) - 700 - fall time t f - 380 - ns v dd =10v, i d =0.55a, v gs =4.5v, r g =6 ? . rating parameter symbol typ. max. unit single operation t Q 10s 270 325 junction-to-ambient thermal resistance 1 steady state r ja 320 385 t Q 10s 360 420 junction-to-ambient thermal resistance 2 steady state r ja 425 520 junction-to-case thermal resistance steady state r jc 260 300 c / w
elektronische bauelemente SMS2020 830ma, 20v n-channel mosfet 21-may-2013 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SMS2020 830ma, 20v n-channel mosfet 21-may-2013 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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